, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. TIC226 series silicon triacs 8 a rms, 70 a peak glass passivated wafer 400 v to 800 v off-state voltage max igt of 50 ma (quadrants 1 - 3) to-220 pa (topv mt-i c mt? r l-ic ckage ew) 1 2 3 o pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) rating repetitive peak off-state voltage (see note 1 ) TIC226d TIC226m TIC226s TIC226n full-cycle rms on-state current at (or below) 85c case temperature (see note 2) peak on-state surge current full-sine-wave (see note 3) peak on-state surge current half-sine-wave (see note 4) peak gate current peak gate power dissipation at (or below) 85c case temperature (pulse width < 200 us) average gate power dissipation at (or below) 85c case temperature (see note 5) operating case temperature range storage temperature range lead temperature 1.6 mm from case for 10 seconds symbol vdrm 't(rms) 'tsm 'tsm igm pgm pg(av) tc ts,g tl value 400 600 700 800 8 70 80 + 1 2.2 0.9 -40 to +110 -40to+125 230 unit v a a a a w w c c c notes: 1. these values apply bidirectionally for any value of resistance between the gate and main terminal 1. 2. this value applies for 50-hz full-sine-wave operation with resistive load. above 85c derate linearly to 110c case temperature at the rate of 320 matc. 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost. 4. this value applies for one 50-hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost. 5. this value applies for a maximum averaging time of 20 ms. electrical characteristics at 25c case temperature (unless otherwise noted) parameter repetitive peak drm off-state current peak gate trigger 'g? current peak gate trigger vg? voltage test conditions vd = rated vdrm ig = 0 tc = 1 1 0c vsuppiy = + 1 2 vt rl = 1 0 n tp(g) > 20 us vsupply = +1 2 vf rl = 1 0 q tp(g) > 20 us vsupply= -12 vf rl=10n tp(g)>20u,s vsupply = -1 2 vt rl=10q tp(g) > 20 us vsupply =+1 2 vf rl=10q w*20^5 vsupply =+1 2 vt rl=10q w*20^5 vsupply = -12 vf rl=100 tp(9)>20ns vsupply = - 1 2 vt rl = 1 0 " tp(g) > 20 us min typ 2 -12 -9 20 0.7 -0.8 -0.8 0.9 max 2 50 -50 -50 2 -2 -2 2 unit ma ma v t all voltages are with respect to main terminal 1. nj semi-conctuctors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
TIC226 series silicon triacs electrical characteristics at 25c case temperature (unless otherwise noted) (continued) parameter vtm peak on-state voltage ih holding current il latching current critical rate of rise of dv/dt off-state voltage critical rise of commu- dv/dtm 1 ' tation voltage test conditions itm = +12a lg = 50ma (see note 6) vsupply = +12vt ig = 0 lnifltm= 100ma vsuppiy= -12 vf ig = 0 lnit'ltm= -100ma ^:+\hl (seenote7) vsupply- ~'^ vt vdrm = rated vdrm ig = 0 tc = 110c , vdrm = rated vdrm itrm = 1 2 a tc = 85c win 5 typ 1.6 5 -9 100 max 2.1 30 -30 50 -50 unit v ma ma v/ms v/us t all voltages are with respect to main terminal 1. notes: 6. this parameter must be measured using pulse techniques, tp = < 1 ms, duty cycle < 2 %. voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. the triacs are triggered by a 15-v (open-circuit amplitude) pulse supplied by a generator with the following characteristics: rg = 100 fi tp(g) = 20 us, tr = < 15 ns, f = 1 khz. thermal characteristics parameter rejc junction to case thermal resistance r9ja junction to free air thermal resistance min typ max 1.8 62.5 unit c/w c/w typical characteristics gate trigger current vs case temperature ? 100 0> u a g 10 o <3 1 n-1 ^^???11. ~*^^.^ + - ""??????. * ? ? - ? ? . _^ -""????. ? ? . : ? ? ? ^~ ~ m, v. p kl 1p ta*^fc^ ? 5 '--?^^ . - ? m a)--11 * . 12 v ms "?*? ? " -60 -40 -20 0 20 40 60 80 100 120 tc - case temperature - c figure 1. gate trigger voltage vs case temperature 10 i o o > 0-1 v i * supply 'btm + + + tdlal = 20 us _| -60 -40 -20 20 40 60 80 100 120 tc ? case temperature - c figure 2.
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